VM6501 - 65V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

65V,70A, RDS(ON) =5.2mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
Green Device Available.

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VM6501 65v n-channel mosfet by Viva Electronics - Datasheet Preview

Datasheet Details

Part number	VM6501
Manufacturer	Viva Electronics
File Size	619.98 KB
Description	65V N-Channel MOSFET
Datasheet	VM6501 Datasheet

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VM6501 65V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration D DDDD S S SG G S BVDSS RDSON ID 65V 5.2mΩ 70A Features  65V,70A, RDS(ON) =5.