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VS-10CTQ150-1PbF - High Performance Schottky Rectifier

Download the VS-10CTQ150-1PbF datasheet PDF. This datasheet also covers the VS-10CTQ150SPbF variant, as both devices belong to the same high performance schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Description

This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature.

Features

  • 175 °C TJ operation.
  • Center tap configuration.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified.
  • Material categorization: for definitions of compliance please see ww.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VS-10CTQ150SPbF-Vishay.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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www.vishay.com VS-10CTQ150SPbF, VS-10CTQ150-1PbF Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A VS-10CTQ150SPbF VS-10CTQ150-1PbF Base common cathode 2 Base common cathode 2 2 1 Common 3 Anode cathode Anode D2PAK 2 1 Common 3 Anode cathode Anode TO-262 FEATURES • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max.
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