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VS-10CTQ150S-M3 - High Performance Schottky Rectifier

Description

This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature.

Features

  • 175 °C TJ operation.
  • Center tap configuration.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: for definit.

📥 Download Datasheet

Datasheet Details

Part number VS-10CTQ150S-M3
Manufacturer Vishay
File Size 206.82 KB
Description High Performance Schottky Rectifier
Datasheet download datasheet VS-10CTQ150S-M3 Datasheet

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Full PDF Text Transcription

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www.vishay.com VS-10CTQ150S-M3, VS-10CTQ150-1-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A 2 1 3 1 2 D2PAK (TO-263AB) 3 Base common cathode 2 TO-262AA Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-10CTQ150S-M3 2 1 Common 3 Anode cathode Anode VS-10CTQ150-1-M3 PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM TJ max. EAS Package 2x5A 150 V 0.
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