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SiZ988DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
Channel-1 Channel-2
VDS (V) 30
30
RDS(on) () (MAX.) 0.0075 at VGS = 10 V 0.0120 at VGS = 4.5 V 0.0041 at VGS = 10 V 0.0052 at VGS = 4.5 V
ID (A) 40 g 32 g 60 60
Qg (TYP.) 6.9 nC
15.4 nC
PowerPAIR® 6 x 5 G2
S2
S2
S2 6
7
8
5 S1/D2
(Pin 9)
6 mm 1 5 mm
Top View
D1 1
4 D1
3 D1
2 D1
G1
Bottom View
Ordering Information:
SiZ988DT-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® Gen IV power MOSFETs
• 100 % Rg and UIS tested • Optimized Qgs/Qgs ratio improves switching
characteristics
• Material categorization: for definitions of compliance please see www.vishay.
SiZ988DT Datasheet
