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SiZ980DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
Channel-1 Channel-2
VDS (V) 30
30
RDS(on) () (MAX.) 0.0067 at VGS = 10 V 0.0100 at VGS = 4.5 V 0.0016 at VGS = 10 V 0.0022 at VGS = 4.5 V
ID (A) 20 a 20 a 60 a 60 a
Qg (TYP.) 5.4 nC
21 nC
PowerPAIR® 6 x 5 G2
S2
S2 S2 6
7
8
5 S1/D2
(Pin 9)
6 mm 1 5 mm
Top View
D1 1
4 D1
3 D1
2 D1
G1
Bottom View
Ordering Information: SiZ980DT-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® Gen IV power MOSFET • SkyFET® low-side MOSFET with integrated
Schottky
• 100 % Rg and UIS tested • Material categorization: for definitions of
compliance please see www.vishay.
SiZ980DT Datasheet
