Datasheet4U Logo Datasheet4U.com

SiZ980BDT - Dual N-Channel MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • SkyFET® low side MOSFET with integrated Schottky.
  • Very low RDS x Qg FOM improves efficiency.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet Details

Part number SiZ980BDT
Manufacturer Vishay
File Size 196.03 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SiZ980BDT Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SIZ300DT Dual N-Channel MOSFET Vishay Siliconix
SIZ700DT N-Channel MOSFET Vishay Siliconix
SIZE144C SMALL PUSH PULL SOLENOID SHINDENGEN

Other Datasheets by Vishay

Part Number Description
SiZ980DT Dual N-Channel MOSFET
SiZ988DT Dual N-Channel MOSFETs
SIZ900DT Dual N-Channel MPSFET
SIZ902DT Dual N-Channel MPSFET
SIZ904DT Dual N-Channel MPSFET

Full PDF Text Transcription

Click to expand full text
www.vishay.com SiZ980BDT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode PowerPAIR® 6 x 5 G2 S2 S2 S2 6 7 8 5 S1/D2 (Pin 9) 6 mm 1 5 mm Top View D1 1 4 D1 3 D1 2 D1 G1 Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL-2 30 30 0.00439 0.00106 0.00712 0.00172 5.7 24.2 54.8 197 Dual plus integrated Schottky (SkyFET) FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated Schottky • Very low RDS x Qg FOM improves efficiency • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
Published: |