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SiS9634LDN - Dual N-Channel MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • Fully lead (Pb)-free device.
  • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiS9634LDN
Manufacturer Vishay
File Size 205.27 KB
Description Dual N-Channel MOSFET
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www.vishay.com SiS9634LDN Vishay Siliconix Dual N-Channel 60-V (D-S) MOSFET PowerPAK® 1212-8 Dual D2 D2 6 D1 7 D1 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 4 G2 3 S2 2 G1 S1 Bottom View 60 0.031 0.0448 3.3 6 Dual FEATURES • TrenchFET® Gen IV power MOSFET • Fully lead (Pb)-free device • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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