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SiS932EDN - N-Channel 30V MOSFET

Features

  • TrenchFET® power MOSFET.
  • Typical ESD (HBM): 1900 V.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiS932EDN
Manufacturer Vishay
File Size 257.33 KB
Description N-Channel 30V MOSFET
Datasheet download datasheet SiS932EDN Datasheet
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Full PDF Text Transcription

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www.vishay.com SiS932EDN Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8 Dual D2 D2 6 D1 7 D1 8 5 3.3 mm 1 3.3 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 4.5 V RDS(on) max. (Ω) at VGS = 2.5 V Qg typ. (nC) ID (A) Configuration 1 4 G2 3 S2 2 G1 S1 Bottom View 30 0.022 0.026 9.2 6 a, g Dual FEATURES • TrenchFET® power MOSFET • Typical ESD (HBM): 1900 V • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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