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www.vishay.com
SiS903DN
Vishay Siliconix
Dual P-Channel 20 V (D-S) MOSFET
PowerPAK® 1212-8 Dual
D2
D2 6
D1 7
D1 8
5
3.3 mm
1
3.3 mm
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ. (nC) ID (A) f, g Configuration
1
4 G2
3 S2
2 G1
S1
-20 0.0201 0.0261 0.0400
15.9 6
Dual
FEATURES
• TrenchFET® Gen III p-channel power MOSFET
• 62 % smaller package footprint than SO-8 • Thermally enhanced PowerPAK® package
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.