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SiRA58DP - N-Channel 40V MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • 100 % Rg and UIS tested.
  • Qgd / Qgs ratio < 1 optimizes switching characteristics.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiRA58DP
Manufacturer Vishay
File Size 376.88 KB
Description N-Channel 40V MOSFET
Datasheet download datasheet SiRA58DP Datasheet

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Full PDF Text Transcription

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www.vishay.com SiRA58DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View 40 0.00265 0.00360 23 109 Single FEATURES • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Qgd / Qgs ratio < 1 optimizes switching characteristics • Material categorization: for definitions of compliance please see www.vishay.
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