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SiRA52DP
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () (MAX.) 0.0017 at VGS = 10 V 0.0023 at VGS = 4.5 V
ID (A) a, g 60 60
Qg (TYP.) 47.5 nC
PowerPAK® SO-8 Single D
D8 D7 D6
5
6.15 mm
1
Top View
5.15 mm
1 2S 3S 4S G Bottom View
Ordering Information:
SiRA52DP-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES • TrenchFET® Gen IV power MOSFET
• Tuned for the lowest RDS-Qoss FOM • 100 % Rg and UIS tested • Qgd / Qgs ratio < 1 optimizes switching
characteristics
• Material categorization: for definitions of compliance please see www.vishay.
SiRA52DP Datasheet
