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SiHB33N60E - Power MOSFET

Features

  • Low figure-of-merit (FOM): Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS) Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com SiHB33N60E Vishay Siliconix E Series Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 150 24 42 Single 0.099 ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and Halogen-free FEATURES • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definitions of compliance please see www.vishay.
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