Full PDF Text Transcription for SiHB085N60EF (Reference)
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SiHB085N60EF. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com SiHB085N60EF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode D2PAK (TO-263) GD S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS...
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63) GD S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 63 17 9 Single 0.073 FEATURES • 4th generation E series technology • Low figure of merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.
SiHB085N60EF Datasheet
