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SiHB30N60E - Power MOSFET

Features

  • Low Figure-of-Merit (FOM) Ron x Qg.
  • Low Input Capacitance (Ciss).
  • Reduced Switching and Conduction Losses.
  • Ultra Low Gate Charge (Qg).
  • Avalanche Energy Rated (UIS).
  • Material categorization: For definitions please www. vishay. com/doc?99912 see.

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Full PDF Text Transcription

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www.vishay.com SiHB30N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 130 15 39 Single 0.125 D2PAK (TO-263) D GD S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free FEATURES • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses • Ultra Low Gate Charge (Qg) • Avalanche Energy Rated (UIS) • Material categorization: For definitions please www.vishay.
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