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Si8824EDB - N-Channel 20V (D-S) MOSFET

Features

  • TrenchFET® power MOSFET.
  • Ultra small 0.8 mm x 0.8 mm outline.
  • Ultra thin 0.357 mm height.
  • Typical ESD protection 2000 V (HBM).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number Si8824EDB
Manufacturer Vishay
File Size 154.48 KB
Description N-Channel 20V (D-S) MOSFET
Datasheet download datasheet Si8824EDB Datasheet
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Full PDF Text Transcription

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www.vishay.com Si8824EDB Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.075 at VGS = 4.5 V 0.082 at VGS = 2.5 V 20 0.090 at VGS = 1.8 V 0.125 at VGS = 1.5 V 0.175 at VGS = 1.2 V ID (A) a 2.9 2.7 2.6 2.2 1.5 Qg (TYP.) 2.7 nC MICRO FOOT® 0.8 x 0.8 S S2 xxxxx 3 1 0.8 mm 1 4G D Backside View Bump Side View 0.8 mm Marking Code: AM Ordering Information: Si8824EDB-T2-E1 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® power MOSFET • Ultra small 0.8 mm x 0.8 mm outline • Ultra thin 0.357 mm height • Typical ESD protection 2000 V (HBM) • Material categorization: for definitions of compliance please see www.vishay.
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