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Si8802DB
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 8
RDS(on) (Ω) 0.054 at VGS = 4.5 V 0.060 at VGS = 2.5 V 0.068 at VGS = 1.8 V 0.086 at VGS = 1.5 V 0.135 at VGS = 1.2 V
ID (A) a 3.5 3.3 3.1 2.3 1
Qg (TYP.) 4.3 nC
MICRO FOOT® 0.8 x 0.8
S
S
2
xxxxx
3
1 0.8 mm
1 4G D
Backside View
Bump Side View
0.8 mm
Marking Code: xx = AB xxx = Date/Lot traceability code
Ordering Information: Si8802DB-T2-E1 (lead (Pb)-free and halogen-free)
FEATURES • TrenchFET® power MOSFET • Small 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile • Low On-resistance • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
D
• Load switch with low voltage drop
• Load switch for 1.2 V, 1.5 V, 1.