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Si8802DB - N-Channel MOSFET

Features

  • TrenchFET® power MOSFET.
  • Small 0.8 mm x 0.8 mm outline area.
  • Low 0.4 mm max. profile.
  • Low On-resistance.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number Si8802DB
Manufacturer Vishay
File Size 133.35 KB
Description N-Channel MOSFET
Datasheet download datasheet Si8802DB Datasheet
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Full PDF Text Transcription

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www.vishay.com Si8802DB Vishay Siliconix N-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) 0.054 at VGS = 4.5 V 0.060 at VGS = 2.5 V 0.068 at VGS = 1.8 V 0.086 at VGS = 1.5 V 0.135 at VGS = 1.2 V ID (A) a 3.5 3.3 3.1 2.3 1 Qg (TYP.) 4.3 nC MICRO FOOT® 0.8 x 0.8 S S 2 xxxxx 3 1 0.8 mm 1 4G D Backside View Bump Side View 0.8 mm Marking Code: xx = AB xxx = Date/Lot traceability code Ordering Information: Si8802DB-T2-E1 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • Small 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile • Low On-resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D • Load switch with low voltage drop • Load switch for 1.2 V, 1.5 V, 1.
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