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Si8817DB - P-Channel 20V (D-S) MOSFET

Features

  • TrenchFET® power MOSFET.
  • Small 0.8 mm x 0.8 mm outline area.
  • Low 0.4 mm max. profile.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number Si8817DB
Manufacturer Vishay
File Size 154.15 KB
Description P-Channel 20V (D-S) MOSFET
Datasheet download datasheet Si8817DB Datasheet
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Full PDF Text Transcription

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www.vishay.com Si8817DB Vishay Siliconix P-Channel 20 V (D-S) MOSFET MICRO FOOT® 0.8 x 0.8 S S2 xxxxx 3 0.8 mm 1 0.8 mm Backside View 1 4G D Bump Side View Marking code: AF PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V RDS(on) max. () at VGS = -1.5 V Qg typ. (nC) ID (A) a, e Configuration -20 0.076 0.100 0.145 0.320 7.5 -2.9 Single FEATURES • TrenchFET® power MOSFET • Small 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile • Material categorization: for definitions of compliance please see www.vishay.
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