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N-Channel 25-V (D-S) MOSFET
SiS436DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0105 at VGS = 10 V 25
0.013 at VGS = 4.5 V
ID (A)a, g 16 16
Qg (Typ.) 6.7 nC
PowerPAK® 1212-8
3.30 mm
D
8
D
7 D
6 D
5
S
1
S
3.30 mm
2 S
3 G
4
Bottom View Ordering Information: SiS436DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • DC/DC Conversion
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
25
V
VGS
± 20
TC = 25 °C
16a, g
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
16g 13.
SIS436DN Datasheet
