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SIS430DN - N-Channel MOSFET

Features

  • Halogen-free.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested PowerPAK® 1212-8.

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Datasheet Details

Part number SIS430DN
Manufacturer Vishay
File Size 154.14 KB
Description N-Channel MOSFET
Datasheet download datasheet SIS430DN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiS430DN Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.0051 at VGS = 10 V 0.0069 at VGS = 4.5 V ID (A)a 35 13 nC 35 Qg (Typ.) FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested PowerPAK® 1212-8 APPLICATIONS • DC/DC Converter - POL - Server 3.30 mm S 1 2 3 S S 3.30 mm D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SiS430DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.
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