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SIS434DN - N-Channel MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC PowerPAK® 1212-8.

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Datasheet Details

Part number SIS434DN
Manufacturer Vishay
File Size 591.48 KB
Description N-Channel MOSFET
Datasheet download datasheet SIS434DN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiS434DN Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.0076 at VGS = 10 V 0.0092 at VGS = 4.5 V ID (A)a 35 12.5 nC 35 Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® 1212-8 APPLICATIONS 3.30 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 3.30 mm • POL D G Bottom View Ordering Information: SiS434DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.
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