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SIR788DP - N-Channel MOSFET

Features

  • SkyFET® Monolithic TrenchFET® Gen III Power MOSFET and Schottky Diode.
  • 100 % Rg Tested.
  • 100 % Avalanche Tested.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SIR788DP
Manufacturer Vishay
File Size 338.67 KB
Description N-Channel MOSFET
Datasheet download datasheet SIR788DP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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New Product SiR788DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. 0.0034 at VGS = 10 V 0.0043 at VGS = 4.5 V ID (A)a 60 60 Qg (Typ.) 24 nC PowerPAK® SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 Bottom View Ordering Information: SiR788DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • SkyFET® Monolithic TrenchFET® Gen III Power MOSFET and Schottky Diode • 100 % Rg Tested • 100 % Avalanche Tested • Material categorization: For definitions of compliance please see www.vishay.
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