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SiR770DP
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS
RDS(on) ()
Channel-1 30 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V
Channel-2 30 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V
ID (A)a, f 8.0 8.0 8.0 8.0
Qg (Typ.) 6.6
6.6
SCHOTTKY PRODUCT SUMMARY
VDS (V) 30
VSD (V) Diode Forward Voltage
0.50 V at 1.0 A
IF (A)a 4.0
PowerPAK SO-8
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Fixed Telecom - Server
• Synchronous Converter
6.15 mm
S1 1
G1 2
5.
SIR770DP Datasheet
