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SI3493DDV - MOSFET

Features

  • TrenchFET® Gen III p-channel power MOSFET.
  • RDS(on) rating at VGS = -1.8 V.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance www. vishay. com/doc?99912 please see.

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www.vishay.com Si3493DDV Vishay Siliconix P-Channel 20 V (D-S) MOSFET TSOP-6 Single S 4 D 5 D 6 Marking code: BQ 1 D Top View 2 D PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ. (nC) ID (A) a, d Configuration 3 G -20 0.0240 0.0321 0.0511 19.8 -8 Single FEATURES • TrenchFET® Gen III p-channel power MOSFET • RDS(on) rating at VGS = -1.8 V • 100 % Rg and UIS tested • Material categorization: for definitions of compliance www.vishay.
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