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CPV363M4UPbF - Fast IGBT

Description

The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Features

  • Fully isolated printed circuit board mount package.
  • Switching-loss rating includes all “tail” losses.

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Full PDF Text Transcription

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www.vishay.com CPV363M4UPbF Vishay Semiconductors IGBT SIP Module (Ultrafast IGBT) IMS-2 PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE IRMS per phase (2.1 kW total) with TC = 90 °C TJ Supply voltage Power factor 7.1 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 6.8 A, 25 °C Package 1.7 V SIP Circuit Three Phase Inverter FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes RoHS COMPLIANT • Optimized for medium speed 1 to 10 kHz See fig. 1 for current vs. frequency curve • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.
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