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CPV362M4UPbF - Fast IGBT

Description

The IGBT technology is the key to Vishay´s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Features

  • Fully isolated printed circuit board mount package.
  • Switching-loss rating includes all “tail” losses.

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Full PDF Text Transcription

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www.vishay.com CPV362M4UPbF Vishay Semiconductors IGBT SIP Module (Fast IGBT) IMS-2 PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE IRMS per phase (3.1 kW total) with TC = 90 °C TJ Supply voltage 4.6 ARMS 125 °C 360 Vdc Power factor 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 3.9 A, 25 °C Package 1.7 V SIP Circuit Three Phase Inverter FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes • Optimized for high speed over 5 kHz See fig. 1 for current vs. frequency curve RoHS COMPLIANT • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.
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