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CPV363M4KPbF - IGBT

Description

The IGBT technology is the key to Vishay’s Sem

Features

  • Short circuit rated ultrafast: optimized for high speed (see fig. 1 for current vs. frequency curve), and short circuit rated to 10 μs at 125 °C, VGE = 15 V.
  • Fully isolated printed circuit board mount package.
  • Switching-loss rating includes all “tail” losses.

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Full PDF Text Transcription

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www.vishay.com CPV363M4KPbF Vishay Semiconductors IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE VCES IRMS per phase (1.94 kW total) with TC = 90 °C TJ Supply voltage Power factor 600 V 6.7 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) VCE(on) (typical) at IC = 6.0 A, 25 °C Speed 115 % 1.72 V 8 kHz to 30 kHz Package Circuit SIP Three phase inverter FEATURES • Short circuit rated ultrafast: optimized for high speed (see fig. 1 for current vs.
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