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SiHFD9120 - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Dynamic dV/dt Rating 0.60.
  • Repetitive Avalanche Rated.
  • For Automatic Insertion.
  • End Stackable.
  • P-Channel.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Lead (Pb)-free Available Available RoHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 18 3.0 9.0 Single S FEATURES • Dynamic dV/dt Rating 0.60 • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • P-Channel • 175 °C Operating Temperature • Fast Switching • Lead (Pb)-free Available Available RoHS* COMPLIANT www.DataSheet4U.com HEXDIP G DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1" pin centers.