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SiHFD9110 - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175 °C Operating Temperature Fast Switching Lead (Pb)-free Available Available 1.2 RoHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 8.7 2.2 4.1 Single S FEATURES • • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175 °C Operating Temperature Fast Switching Lead (Pb)-free Available Available 1.2 RoHS* COMPLIANT www.DataSheet4U.com HEXDIP G DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers.