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SiHFD9020 - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Dynamic dv/dt Rating.
  • Repetitive Avalanche Rated.
  • For Automatic Insertion.
  • End Stackable.
  • P-Channel.
  • 175 °C Opertaing Temperature.
  • Fast Switching.
  • Lead (Pb)-free Available S Available RoHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFD9020, SiHFD9020 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 19 5.4 11 Single - 60 0.28 FEATURES • Dynamic dv/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • P-Channel • 175 °C Opertaing Temperature • Fast Switching • Lead (Pb)-free Available S Available RoHS* COMPLIANT www.DataSheet4U.com HEXDIP DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers.