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Si6969BDQ
New Product
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.030 @ VGS = -4.5 V -12 0.040 @ VGS = -2.5 V 0.055 @ VGS = -1.8 V
ID (A)
-4.6 - 3.8 - 3.0
S1
S2
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TSSOP-8
D1 S1 S1 G1 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2
Si6969BDQ
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
-12 "8 - 4.6
Steady State
Unit
V
-4.0 -3.2 -30 A -0.7 0.83 0.
SI6969BDQ Datasheet
