SI6965DQ - P-Channel MOSFET

Vishay

Datasheet Details

Part number	SI6965DQ
Manufacturer	Vishay
File Size	53.55 KB
Description	P-Channel MOSFET
Datasheet	SI6965DQ Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
Si6953DQ	Dual P-Channel 20-V (D-S) MOSFET	Vishay
Si6953DQ	Dual 20V P-Channel PowerTrench MOSFET	Fairchild Semiconductor
Si6956DQ	Dual N-Channel 20-V (D-S) MOSFET	Vishay
Si6991DQ	Dual P-Channel MOSFET	Vishay
Si6993DQ	Dual P-Channel MOSFET	Vishay

Other Datasheets by Vishay

Part Number	Description
SI6963BDQ	Dual P-Channel 2.5-V (G-S) MOSFET
SI6966EDQ	N-Channel 2.5-V (G-S) MOSFET
SI6967DQ	Dual P-Channel MOSFET
SI6968ADQ	N-Channel 2.5-V (G-S) Battery Switch
SI6968BEDQ	Dual N-Channel 2.5-V (G-S) MOSFET Common Drain

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Si6965DQ Vishay Siliconix P-Channel 2.5-V (G-S) Battery Switch PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.035 @ VGS = –4.5 V 0.060 @ VGS = –2.5 V ID (A) "5.0 "3.9 S1 S2 TSSOP-8 D S1 S1 G1 1 2 3 4 Top View D P-Channel MOSFET D P-Channel MOSFET D 8 D S2 S2 G2 G1 G2 Si6965DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –20 "12 "5.0 "4.0 "30 –1.5 1.5 0.