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Si6991DQ
New Product
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
- 30
D TrenchFETr Power MOSFETS ID (A)
- 4.2 - 3.2
rDS(on) (W)
0.040 @ VGS = - 10 V 0.068 @ VGS = - 4.5 V
APPLICATIONS
D Load Switch D Battery Switch
S1
S2
TSSOP-8
D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6991DQ T-1 D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
- 30 "20 - 4.
Si6991DQ Datasheet
