SI2305DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 8 8 r DS(on) (W)
0.052 @ VGS =
- 4.5 V 0.071 @ VGS =
- 2.5 V 0.108 @ VGS =
- 1.8 V
ID (A)
"3.5 "3 "2
TO-236 (SOT-23)
G 1 3 S 2 D
Top View Si2305DS (A5)-
- Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipation)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
- 8 "8 "3.5 "2.8 "12
- 1.6 1.25 0.8
- 55 to 150
Unit
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta t v 5 sec Steady State Notes a. Surface Mounted on FR4 Board. b. t v5 sec. Document Number: 70833 S-56947- Rev. C, 28-Dec-98 .vishay. S Fax Back 408-970-5600
Symbol
Rth JA
Typical
Maximum
Unit
_C/W
2-1...
