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SI1032R - N-Channel MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Low-Side Switching.
  • Low On-Resistance: 5 .
  • Low Threshold: 0.9 V (typ. ).
  • Fast Switching Speed: 35 ns.
  • TrenchFET® Power MOSFETs: 1.5 V Rated.
  • 2000 V ESD Protection.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number SI1032R
Manufacturer Vishay
File Size 129.53 KB
Description N-Channel MOSFET
Datasheet download datasheet SI1032R Datasheet

Full PDF Text Transcription for SI1032R (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SI1032R. For precise diagrams, and layout, please refer to the original PDF.

N-Channel 1.5 V (G-S) MOSFET Si1032R/X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 5 at VGS = 4.5 V 7 at VGS = 2.5 V 20 9 at VGS = 1.8 V 10 at VGS = 1.5 V ID (mA...

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= 4.5 V 7 at VGS = 2.5 V 20 9 at VGS = 1.8 V 10 at VGS = 1.5 V ID (mA) 200 175 150 50 SC-75A or SC-89 G1 3D S2 Top View Marking Code: G Ordering Information: Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1032X-T1-GE3 (SC-89, Lead (Pb)-free -free Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low-Side Switching • Low On-Resistance: 5  • Low Threshold: 0.9 V (typ.) • Fast Switching Speed: 35 ns • TrenchFET® Power MOSFETs: 1.