VS6614GS
Features
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=4.5 V
- Vito MOS® Ⅱ Technology
- 100% Avalanche test
- Pb-free lead plating; Ro HS pliant
60V/13A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID
10.5 mΩ
17 mΩ
SOP8
Part ID VS6614GS
Package Type SOP8
Marking 6614GS
Tape and reel information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current
Continuous drain current @VGS=10V
Pulse drain current tested ①
Avalanche energy, single pulsed ②
Maximum power dissipation
TSTG , TJ
Storage and junction temperature range
Thermal Characteristics
Symbol
Parameter
TA =25°C TA =25°C TA =70°C TA =25°C
TA...
