VS6614AD
Features
- N-Channel，5V Logic Level Control
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=4.5 V
- Fast Switching
- 100% Avalanche test
- Pb-free lead plating; Ro HS pliant
60V/30A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID
60 V 26 mΩ 29 mΩ 30 A
TO-252
Part ID VS6614AD
Package Type TO-252
Marking 6614AD
Tape and reel information
2500pcs/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient
TC =25°C TC =25°C TC =100°C TC =25°C
TC...
