VS6614GE
Features
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=4.5 V
- Vito MOS® Ⅱ Technology
- 100% Avalanche test
- Pb-free lead plating; Ro HS pliant
65V/40A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10V R @ DS(on),TYP VGS=4.5V ID
65 V 10.5 mΩ 17 mΩ 40 A
PDFN3333
Part ID VS6614GE
Package Type PDFN3333
Marking 6614GE
Packing 5000pcs/Reel
Maximum ratings, at T A=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
IS ID IDM
IDSM EAS
Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V
Pulse drain current tested ①
Continuous drain current @VGS=10V
Avalanche energy, single pulsed ②
Maximum power dissipation
PDSM
Maximum power dissipation ③
TSTG , TJ
Storage and junction temperature range
Thermal Characteristics
Symbol
Parameter
RθJC R JA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
TC=25°C
TC =25°C TC =100°C TC =25°C
TA=25°C...
