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VS4606AS - N+P-Channel Advanced Power MOSFET

Description

VS4606AS designed by the trench processing techniques to achieve extremely low on-resistance.

And fast switching speed and improved transfer effective .

Features

  • N-CH: 30V/6A, RDS(ON)=30mΩ(Typ)@VGS=4.5V.
  • P-CH: -30V/-5.2A,RDS(ON)=45mΩ(Typ)@VGS=-4.5V.
  • Low On-Resistance.
  • Low Vth.

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Datasheet Details

Part number VS4606AS
Manufacturer Vanguard Semiconductor
File Size 304.68 KB
Description N+P-Channel Advanced Power MOSFET
Datasheet download datasheet VS4606AS Datasheet

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Full PDF Text Transcription

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VS4606AS 30V/6A N+P Channel Advanced Power MOSFET Features ♦N-CH: 30V/6A, RDS(ON)=30mΩ(Typ)@VGS=4.5V ♦P-CH: -30V/-5.2A,RDS(ON)=45mΩ(Typ)@VGS=-4.5V ♦Low On-Resistance ♦Low Vth Application ♦Fast Switching ♦150°C Operating Temperature ♦Lead-Free, Green Product Pin Description Description VS4606AS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.
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