VS4620DE-G
Features
V DS R @ DS(on),TYP VGS=10V
40 V 9 mΩ
- Dual N-Channel
R @ DS(on),TYP VGS=4.5V
12 mΩ
- Enhancement mode
- Vito MOS® Ⅱ Technology
I D(Silicon Limited) I D(Package Limited)
47 A 14 A
- 100% Avalanche Tested,100% Rg Tested
- Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses
PDFN3333 Dual
Part ID VS4620DE-G
Package Type PDFN3333 Dual
Marking 4620DE
Packing 5000pcs/Reel
Maximum ratings, at T A=25 °C, unless otherwise specified
Symbol
Parameter
Rating
Unit
V(BR)DSS Drain-Source breakdown voltage
Gate-Source voltage
±20
Diode continuous forward current (Wire bond limited)
TC = 25°C
Continuous drain current @VGS=10V (Silicon limited)
TC = 25°C
Continuous drain current @VGS=10V (Silicon limited)
TC =...
