VS4620DS-G
Features
V DS R @ DS(on),TYP VGS=10V
40 V 8.1 mΩ
- Enhancement mode
- Vito MOS® Ⅱ Technology
R @ DS(on),TYP VGS=4.5V ID
11 mΩ 11 A
- 100% Avalanche Tested,100% Rg Tested
SOP8
- Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses
Part ID VS4620DS-G
Package Type SOP8
Marking 4620DS
Packing 3000pcs/Reel
Maximum ratings, at T A=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
Gate-Source voltage
Diode continuous forward current
Continuous drain current @VGS=10V
Continuous drain current @VGS=10V
Pulse drain current tested ①
Avalanche energy, single pulsed ②
Maximum power dissipation ③
TSTG,TJ Storage and Junction Temperature Range
Thermal Characteristics
TA = 25°C TA = 25°C TA = 70°C TA = 25°C
TA = 25°C TA = 70°C
Symbol
Parameter
Typical
RθJL RθJA...
