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VS30P60AI - P-Channel Advanced Power MOSFET

Description

VS30P60AI/AD designed by the trench processing techniques to achieve extremely low on-resistance.

Features

  • Low On-Resistance，5V Logic Level Control Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant.

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Datasheet Details

Part number VS30P60AI
Manufacturer Vanguard Semiconductor
File Size 269.65 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet VS30P60AI Datasheet

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Full PDF Text Transcription

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VS30P60AI VS30P60AD -30V/-60A P-Channel Advanced Power MOSFET Features Low On-Resistance，5V Logic Level Control Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS30P60AI/AD designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Power applications and a wide variety of other supply applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
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