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VS30P60AD - P-Channel Advanced Power MOSFET

Download the VS30P60AD datasheet PDF. This datasheet also covers the VS30P60AI variant, as both devices belong to the same p-channel advanced power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

VS30P60AI/AD designed by the trench processing techniques to achieve extremely low on-resistance.

Features

  • Low On-Resistance，5V Logic Level Control Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VS30P60AI-VanguardSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VS30P60AD
Manufacturer Vanguard Semiconductor
File Size 269.65 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet VS30P60AD Datasheet

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Other Datasheets by Vanguard Semiconductor

Part Number Description
VS30P60AI P-Channel Advanced Power MOSFET
VS30P39AE P-Channel Advanced Power MOSFET
VS30P39AP P-Channel Advanced Power MOSFET
VS3009DS 30V/8A Dual N-Channel Advanced Power MOSFET
VS30150AD N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
VS30P60AI VS30P60AD -30V/-60A P-Channel Advanced Power MOSFET Features Low On-Resistance，5V Logic Level Control Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS30P60AI/AD designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Power applications and a wide variety of other supply applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
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