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VS30P39AP - P-Channel Advanced Power MOSFET

Description

VS30P39AP designed by the trench processing techniques to achieve extremely low on-resistance.

Features

  • Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant.

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Datasheet Details

Part number VS30P39AP
Manufacturer Vanguard Semiconductor
File Size 265.06 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet VS30P39AP Datasheet

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Full PDF Text Transcription

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VS30P39AP -30V/-39A P-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS30P39AP designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Power applications and a wide variety of other supply applications. V DS R DS(on),typ @ VGS= -10V ID -30 V 9 mΩ -39 A Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
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