Click to expand full text
VBZFB60N03
PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration
TO-251
N-Channel 30-V (D-S) MOSFET
www.VBsemi.com
30
V
3.5
mΩ
4.5
mΩ
100
A
Single
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
• OR-ing
• Server
D
• DC/DC
G
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
IAS L = 0.
VBZFB60N03 Datasheet
