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VBZFB40N10 N-Channel 100 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () 0.036 at VGS= 10 V
ID (A) 35
TO-251 D
FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Primary Side Switch
GDS Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAS
Single Pulse Avalanche Energy
L = 0.
VBZFB40N10 Datasheet
