Click to expand full text
VBZFB20P06
P-Channel 60-V (D-S) MOSFET
www.VBsemi.com
VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V
ID
TO-251
-60 V 66 mΩ 80 mΩ -25 A
FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch
S
G
GDS Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
L = 0.
VBZFB20P06 Datasheet
