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VBZE50N04
N-Channel 40-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0050 at VGS = 10 V 40
0.0065 at VGS = 4.5 V
ID (A)a, c 85 70
Qg (Typ.) 80 nC
TO-252
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS • Synchronous Rectification • Power Supplies
D
RoHS
COMPLIANT
G
GD S
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
L = 0.
VBZE50N04 Datasheet
