VBZE10N65S - N-Channel Power MOSFET

Datasheet Summary

Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

VBsemi

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Datasheet Details

Part number	VBZE10N65S
Manufacturer	VBsemi
File Size	273.27 KB
Description	N-Channel Power MOSFET
Datasheet	VBZE10N65S Datasheet
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VBZE10N65S www.VBsemi.com N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 38 4 4.2 Single 0.

Published: Sep 5, 2024 |