VBZE4N60 - N-Channel MOSFET

Datasheet Summary

Features

Ultra Low Gate Charge.
Reduced Gate Drive Requirement.
Enhanced 30 V, VGS Rating.
Reduced Ciss, Coss, Crss.
Extremely High Frequency Operation.
Repetitive Avalanche Rated.
Compliant to RoHS Directive 2002/95/EC Available RoHS.

VBsemi

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Datasheet Details

Part number	VBZE4N60
Manufacturer	VBsemi
File Size	255.23 KB
Description	N-Channel MOSFET
Datasheet	VBZE4N60 Datasheet
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VBZE4N60 www.VBsemi.com N-Channel 600V (D-S) Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 2.

Published: Sep 8, 2024 |