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VBHA161K
N-Channel 60 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS(min.) (V)
RDS(on) ()
60
1.25 at VGS = 10 V
VGS(th) (V) 1 to 2.5
ID (mA) 330
SOT-7 23
G1 S2
3D
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFETs • Low On-Resistance: 1.25 • Low Threshold: 2.5 V • Low Input Capacitance: 30 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • Miniature Package • ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
VBHA161K Datasheet
